Monday, 11 December, 2017

Samsung Has Begun Production of 512GB Flash Storage For Next Gen Phones

Samsung starts cranking out 512GB eUFS storage Galaxy S9 Could Sport 512GB of Internal Memory as Samsung Announces First-Ever UFS Storage for Next-Gen Phones
Juana Turner | 06 December, 2017, 00:21

Earlier today, Samsung revealed some technical information about the new flash memory for next-gen mobile devices, advertising it as "the best embedded storage solution for next-generation premium smartphones by overcoming potential limitations in system performance that can occur with the use of micro SD cards". It could also help the Galaxy S9 become the company's best-selling smartphone to date. Even though there is no mention of the Samsung Galaxy S9 and Galaxy Note 9, it's possible that this new module will find its way into both or either phone. From the days of 4GB of built-in memory to the current 256GB of internal storage, it sure has been a huge jump. And the faster the flash memory, the quicker the phone will feel. Utilizing Samsung's latest 64-layer 512-gigabit (Gb) V-NAND chips, the new 512GB eUFS package provides unparalleled storage capacity and outstanding performance for upcoming flagship smartphones and tablets. With this in mind, it's natural to meet more rumors and speculations regarding the S9 pair compared to the Note 9. With 256GB versions of handsets usually costing a premium, a 512GB model would probably be even more expensive.

Samsung starts cranking out 512GB eUFS storage
Samsung starts production of 512GB eUFS chips, could appear in Galaxy S9

Coming to the intricate details of the announcement, this 512GB of eUFS storage comprises up of eight 64-layer 512Gb V-NAND chips and a controller chip, all stacked together. Samsung says this is particularly noteworthy, given that its 512GB eUFS solution contains twice the number of cells as its 256GB eUFS solution. That means the new chip doesn't need to more physical space inside the smartphone. The 512 GB chip stacks eight of the aforementioned NAND dies and is speced for up to 860 MB/s sequential read speeds as well as up to 255 MB/s sequential write speeds, which is in line with the company's 256 GB eUFS device launched in 2016. Based on the eUFS' rapid random writes, which are approximately 400 times faster than the 100 IOPS speed of a conventional microSD card, mobile users can enjoy seamless multimedia experiences such as high-resolution burst shooting, as well as file searching and video downloading in dual-app viewing mode.

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